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ISL71823ASRH PDF预览

ISL71823ASRH

更新时间: 2024-11-27 14:57:31
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
25页 635K
描述
Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs

ISL71823ASRH 数据手册

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DATASHEET  
IS-1825xSRH, IS-1825BSEH, ISL71823xSRH  
Single Event and Total Dose Hardened, High-Speed Dual Output PWMs  
FN9065  
Rev.7.01  
Jan 6, 2022  
The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH,  
ISL71823ASRH, and ISL71823BSRH are single event  
Features  
• Electrically screened to DLA SMD 5962-02511  
• QML qualified per MIL-PRF-38535 requirements  
• Oscillator frequency: 1MHz (max)  
• High output drive current: 1A peak (typ)  
• Low startup current: 300µA (max)  
• Undervoltage Lockout  
and total dose hardened pulse width modulators designed  
to be used in high-frequency switching power supplies in  
either voltage or current-mode configurations. These  
devices include a precision voltage reference, a low  
power start-up circuit, a high-frequency oscillator, a  
wide-band error amplifier, and a fast current-limit  
comparator.  
The IS-1825xSRH and IS-1825xSEH feature dual,  
alternating output operating from zero to less than 50%  
duty cycle, and the ISL71823xSRH features dual  
in-phase output operating from zero to less than 100%  
duty cycle. The B versions of the parts test the delay from  
clock out to PWM output switching after power has been  
• Start threshold: 8.8V (max)  
• Stop threshold: 7.6V (min)  
• Hysteresis: 300mV (min)  
• Pulse-by-pulse current limiting  
applied to the modulator (t  
) (see Figure 2 on page 9).  
• Programmable leading edge blanking  
PWM  
The SEH parts are wafer-by-wafer acceptance tested to  
50krad(Si) at a low dose rate of <10mrad(Si)/s.  
• Radiation acceptance testing - IS-1825xSRH,  
ISL71823xSRH  
Constructed with the Rad-hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices  
are immune to single-event latch-up and have been  
specifically designed to provide a high level of immunity  
to single-event transients. All specified parameters are  
established and tested for 300krad(Si) total dose  
performance.  
• High Dose Rate (HDR) (50-300rad(Si)/s):  
300krad(Si)  
• Radiation acceptance testing - IS-1825BSEH  
• High Dose Rate (HDR) (50-300rad(Si)/s):  
300krad(Si)  
• Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si)  
• Latch-up immune (dielectrically isolated)  
• SEE hardness (see SEE report for details)  
The devices are offered in a 16 Ld CDIP or a 20 Ld  
CDFP and fully specified to across the temperature range  
of -50°C to +125°C.  
2
• SEU immune: LET= 35MeV•cm /mg  
Applications  
Voltage or current mode switching power supplies  
• Control of high current MOSFET drivers  
• Motor speed and direction control  
Table 1. Key Differences Between Family of Parts  
Clock-to-PWM  
Startup Test  
Part Number  
Dual Outputs  
IS-1825ASRH  
IS-1825BSRH  
IS-1825BSEH  
Out of Phase  
Out of Phase  
Out of Phase  
In Phase  
-
Yes  
Yes  
-
ISL71823ASRH  
ISL71823BSRH  
In Phase  
Yes  
FN9065 Rev.7.01  
Jan 6, 2022  
Page 1 of 24  
© 2002 Renesas Electronics  

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