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ISL70419SEHVX PDF预览

ISL70419SEHVX

更新时间: 2024-02-27 05:02:44
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
22页 1320K
描述
Spectral analysis equipment

ISL70419SEHVX 数据手册

 浏览型号ISL70419SEHVX的Datasheet PDF文件第2页浏览型号ISL70419SEHVX的Datasheet PDF文件第3页浏览型号ISL70419SEHVX的Datasheet PDF文件第4页浏览型号ISL70419SEHVX的Datasheet PDF文件第5页浏览型号ISL70419SEHVX的Datasheet PDF文件第6页浏览型号ISL70419SEHVX的Datasheet PDF文件第7页 
Radiation Hardened 36V Quad Precision Low Power  
Operational Amplifier With Enhanced SET Performance  
ISL70419SEH  
The ISL70419SEH contains four very high precision amplifiers  
featuring the perfect combination of low noise vs power  
Features  
• Electrically screened to DLA SMD# 5962-14226  
• Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110µV, Max.  
• Superb offset temperature coefficient. . . . . . . 1µV/°C, Max.  
• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max.  
• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.  
Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA  
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz  
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V  
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C  
consumption. Low offset voltage, low I  
current and low  
BIAS  
temperature drift making them the ideal choice for applications  
requiring both high DC accuracy and AC performance. The  
combination of high precision, low noise, low power and small  
footprint provides the user with outstanding value and flexibility  
relative to similar competitive parts.  
Applications for these amplifiers include precision active  
filters, medical and analytical instrumentation, precision  
power supply controls, and industrial controls.  
The ISL70419SEH is offered in a 14 Ld hermetic ceramic  
flatpack package. The device is offered in an industry standard  
pin configuration and operates over the extended temperature  
range from -55°C to +125°C.  
• Radiation environment  
2
- SEB LET (V = ±18V) . . . . . . . . . . . . . 86.4 MeV•cm /mg  
TH  
S
2
- SET recovery time . . . . . . . . . . 10µs at 60 MeV•cm /m  
- SEL immune (SOI process)  
Applications  
• Precision instrumentation  
• Spectral analysis equipment  
• Active filter blocks  
- Total dose HDR (50-300rad(Si)/s) . . . . . . . . . . 300krad(Si)  
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . .100krad(Si) *  
* Product capability established by initial characterization. The  
EH version is acceptance tested on a wafer-by-wafer basis to  
50krad(Si) at low dose rate.  
• Thermocouples and RTD reference buffers  
• Data acquisition  
Related Literature  
AN1936, ISL70419SEHEV1Z Evaluation Board User’s Guide  
• Power supply control  
10  
CH2 = V  
- B  
OUT  
= ±15V  
S
9
8
7
6
5
4
3
2
1
0
V
C
1
8.2nF  
V
+
-
ISL70419SEH  
+
OUTPUT  
R
R
2
1
V
IN  
1.84k  
4.93k  
3.3nF  
C
2
V
-
-8  
-6  
-4  
-2  
0
2
4
SET EXTREME DEVIATION(V)  
SALLEN-KEY LOW PASS FILTER (f = 10kHz)  
C
2
FIGURE 1. TYPICAL APPLICATION  
FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60 MeV•cm /mg  
July 11, 2014  
FN8653.0  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2014. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1

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