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ISL70040SEHL/PROTO

更新时间： 2024-09-23 20:43:55
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动接口集成电路
页数 文件大小 规格书
20页 1106K
描述
Buffer/Inverter Based Peripheral Driver

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中文翻译

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ISL70040SEHL/PROTO 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：compliant
风险等级：5.61接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-609代码：e4峰值回流温度（摄氏度）：NOT SPECIFIED
端子面层：Gold (Au)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

ISL70040SEHL/PROTO 数据手册

 浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第2页浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第3页浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第4页浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第5页浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第6页浏览型号ISL70040SEHL/PROTO的Datasheet PDF文件第7页 
DATASHEET  
ISL70040SEH, ISL73040SEH  
Radiation Hardened Low-Side GaN FET Driver  
FN8984  
Rev.8.00  
Mar 26, 2020  
The ISL70040SEH and ISL73040SEH are low-side  
drivers designed to drive enhancement mode Gallium  
Nitride (GaN) FETs in isolated topologies and boost type  
configurations. The ISL70040SEH operates with a  
supply voltage from 4.5V to 13.2V and has both  
inverting (INB) and non-inverting (IN) inputs to satisfy  
requirements for inverting and non-inverting gate drives  
with a single device.  
Features  
• Wide operating voltage range of 4.5V to 13.2V  
• Up to 14.7V logic inputs (regardless of V level)  
DD  
• Inverting and non-inverting inputs  
• Optimized to drive enhancement mode GaN FETs  
• Internal 4.5V regulated gate drive voltage  
• Independent outputs for adjustable  
turn-on/turn-off speeds  
The ISL70040SEH and ISL73040SEH have a 4.5V gate  
drive voltage (V  
) generated using an internal  
DRV  
• Full military temperature range operation  
regulator that prevents the gate voltage from exceeding  
the maximum gate-source rating of enhancement mode  
GaN FETs. The gate drive voltage also features an  
Undervoltage Lockout (UVLO) protection that ignores  
the inputs (IN/INB) and keeps OUTL turned on to ensure  
• T = -55°C to +125°C  
A
• T = -55°C to +150°C  
J
• Radiation hardness assurance (wafer-by-wafer)  
the GaN FET is in an OFF state whenever V  
the UVLO threshold.  
is below  
DRV  
• High Dose Rate (HDR) (50-300rad(Si)/s):  
100krad(Si) (ISL70040SEH only)  
The ISL70040SEH and ISL73040SEH inputs can  
withstand voltages up to 14.7V regardless of the V  
voltage. This allows the ISL70040SEH and  
ISL73040SEH inputs to be connected directly to most  
PWM controllers. The ISL70040SEH and ISL73040SEH  
split outputs offer the flexibility to adjust the turn-on and  
turn-off speed independently by adding additional  
impedance to the turn-on/off paths.  
• Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)  
DD  
• SEE hardness (see the ISL70040SEH, ISL73040SEH  
SEE Report for details)  
2
• No SEB/L LET , V = 14.7V: 86MeV•cm /mg  
TH DD  
2
• No SET, LET , V = 13.2V: 86MeV•cm /mg  
TH  
DD  
• Electrically screened to DLA SMD 5962-17233  
Applications  
• Flyback and forward converters  
The ISL70040SEH and ISL73040SEH operate across  
the military temperature range from -55°C to +125°C  
and are offered in an 8 Ld hermetically sealed ceramic  
Surface Mount Device (SMD) package or die form.  
• Boost and PFC converters  
• Secondary synchronous FET drivers  
Related Literature  
For a full list of related documents, visit our website:  
• ISL70040SEH and ISL73040SEH device pages  
12V  
22V - 36V  
4.8  
4.7  
-55°C  
+25°C  
4.6  
4.5  
12V  
VDD VDRV  
1
2
3
4
8
7
6
5
4.4  
4.3  
4.2  
+125°C  
ISL70023SEH  
100V GaN FET  
PWM  
IN  
OUTH  
OUTL  
Controller  
INB  
VSS  
ISL7884xSEH  
IS-1825BSEH  
VSSP  
4
5
6
7
8
9
10  
11  
12  
13  
14  
ISL70040SEH/  
ISL73040SEH  
V
(V)  
DD  
Figure 1. ISL70040SEH/ISL73040SEH 8 Ld SMD Package  
Figure 2. VDRV Line Regulation vs Temperature  
FN8984 Rev.8.00  
Mar 26, 2020  
Page 1 of 20  
1234567...20

中文翻译

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