5秒后页面跳转
捷配首页

Datasheet > ISL70005SEHX/SAMPLE
ISL70005SEHX/SAMPLE PDF预览

ISL70005SEHX/SAMPLE

更新时间： 2024-09-23 19:58:31
品牌 Logo 应用领域
瑞萨 - RENESAS 信息通信管理开关
页数 文件大小 规格书
46页 1400K
描述
Switching Regulator/Controller

阅读下载

中文翻译

获取价格

ISL70005SEHX/SAMPLE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：DIE, DIE OR CHIPReach Compliance Code：compliant
风险等级：5.75模拟集成电路 - 其他类型：SWITCHING REGULATOR
控制模式：VOLTAGE-MODE控制技术：PULSE WIDTH MODULATION
JESD-30 代码：R-XUUC-N34功能数量：1
端子数量：34最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：UNSPECIFIED
封装代码：DIE封装等效代码：DIE OR CHIP
封装形状：RECTANGULAR封装形式：UNCASED CHIP
最大供电电流 (Isup)：15 mA标称供电电压 (Vsup)：3 V
表面贴装：NO切换器配置：BUCK
最大切换频率：1175 kHz技术：BICMOS
温度等级：MILITARY端子形式：UNSPECIFIED
端子位置：UPPERBase Number Matches：1

ISL70005SEHX/SAMPLE 数据手册

 浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第2页浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第3页浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第4页浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第5页浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第6页浏览型号ISL70005SEHX/SAMPLE的Datasheet PDF文件第7页 
Datasheet  
ISL70005SEH, ISL73005SEH  
Radiation Hardened Dual Output Point-of-Load, Integrated Synchronous Buck and Low Dropout  
Regulator  
The ISL70005SEH and ISL73005SEH are radiation  
hardened dual output Point-of-Load (POL) regulators  
combining the high efficiency of a synchronous buck  
regulator with the low noise of a Low Dropout (LDO)  
Features  
• Dual output regulator: sync buck and LDO  
• Independent EN, SS, and PG indicators  
regulator. They are suited for systems with 3.3V or 5V  
power buses and can support continuous output load  
currents of 3A for the buck regulator and ±1A for the  
LDO.  
• ±1% reference voltage  
• 1A current sourcing/sinking capability on LDO  
• External clock synchronization: 100kHz to 1MHz  
• Full military temperature range operation  
The buck regulator uses a voltage mode control  
architecture and switches at a resistor adjustable  
frequency of 100kHz to 1MHz. Externally adjustable  
loop compensation allows for an optimum balance  
between stability and output dynamic performance.  
The internal synchronous power switches are  
optimized for high efficiency and excellent thermal  
performance.  
○ T = -55°C to +125°C  
A
○ T = -55°C to +150°C  
J
• Radiation acceptance testing - ISL70005SEH  
○ HDR (50-300rad(Si)/s): 100krad(Si)  
○ LDR (0.01rad(Si)/s): 75krad(Si)  
• Radiation acceptance testing - ISL73005SEH  
○ LDR (0.01rad(Si)/s): 75krad(Si)  
The LDO is completely configurable independent of  
the switching regulator. It uses NMOS pass devices  
and separate chip bias voltage (L_VCC) to drive its  
gate, enabling the LDO to operate with a very low  
voltage at the L_VIN input. The LDO can sink and  
source up to 1A continuously, making it an ideal  
choice to power DDR memory.  
• SEE hardness (see test report)  
2
○ No SEB or SEL at LET 86.4MeV•cm /mg  
2
○ SET at LET 86.4MeV•cm /mg <±3% ΔV  
OUT  
2
○ No SEFI at LET 43MeV•cm /mg  
The ISL70005SEH and ISL73005SEH are available  
in a space saving 28 Ld ceramic dual flat-pack  
package or in die form. They are specified to operate  
• Electrically screened to DLA SMD 5962-19209  
Applications  
across a temperature range of T = -55°C to +125°C.  
A
• Point-of-load for low power FPGA core, auxiliary  
and I/O supply voltages  
Related Literature  
• DDR memory power for VDDQ and VTT rails  
• Distributed power system of satellite payloads  
For a full list of related documents visit our website:  
• ISL70005SEH, ISL73005SEH device pages  
ISL70005SEH, ISL73005SEH  
Buck Regulator  
0.915  
0.910  
0.905  
0.900  
3.3V or 5V  
VDDQ = 1.8V  
B_PVINx B_LXx  
VDDQ  
VTT = 0.9V  
L_VIN  
L_OUT  
LDO Regulator  
DDR Memory  
Controller  
R
T
DDR  
Memory  
L_VCC = B_VCC = 5V  
L_VIN = 1.8V  
0.895  
R
S
L_EA+ = 0.9V  
0.890  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
LDO Current (A)  
Figure 2. LDO Load Regulation; DDR2 Configuration  
Figure 1. Power Solution for DDR2 Memory  
R34DS0008EU0101 Rev.1.01  
Jan.8.20  
Page 1 of 46  
1234567...46

中文翻译

下载PDF

与ISL70005SEHX/SAMPLE相关器件

型号 品牌 获取价格 描述 数据表
ISL70020SEH RENESAS

获取价格

 		40V, 65A Enhancement Mode GaN Power Transistor
ISL70023SEH RENESAS

获取价格

 		100V, 60A Enhancement Mode GaN Power Transistor
ISL70024SEH RENESAS

获取价格

 		200V, 7.5A Enhancement Mode GaN Power Transistor
ISL70040SEH RENESAS

获取价格

 		Radiation Hardened Low Side GaN FET Driver
ISL70040SEHL/PROTO RENESAS

获取价格

 		Buffer/Inverter Based Peripheral Driver
ISL70061SEH RENESAS

获取价格

 		Radiation Hardened 10A PMOS Load Switch
ISL70062SEH RENESAS

获取价格

 		Radiation Hardened 10A NMOS Load Switch
ISL70100SEH RENESAS

获取价格

 		Radiation Hardened 40V High Side Current Sense Amplifiers
ISL70218SEH INTERSIL

获取价格

 		Rad Hard Dual 36V Precision Single-Supply, Rail-to-Rail Output, Low-Power Operational Ampl
ISL70218SEH RENESAS

获取价格

 		Radiation Hardened Dual 36V Precision Single-Supply, Rail-to-Rail Output, Low-Power Operat

与ISL70005SEHX/SAMPLE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证