Datasheet > ISL6594B

ISL6594B

更新时间： 2024-01-07 21:22:00

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器
页数	文件大小	规格书
10页	239K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ISL6594B 技术参数

生命周期：	Unknown	零件包装代码：	DFN
包装说明：	HVSON, SOLCC10,.12,20	针数：	10
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	5 weeks
风险等级：	5.46	高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER	JESD-30 代码：	S-PDSO-N10
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	3	功能数量：	1
端子数量：	10	最高工作温度：	85 °C
最低工作温度：		标称输出峰值电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装等效代码：	SOLCC10,.12,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	峰值回流温度（摄氏度）：	260
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	6.8 V
标称供电电压：	12 V	电源电压1-最大：	12 V
电源电压1-分钟：	5 V	表面贴装：	YES
温度等级：	OTHER	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	3 mm

ISL6594B 数据手册

ISL6594A, ISL6594B

Data Sheet

July 31, 2006

FN9157.3

Advanced Synchronous Rectified Buck

MOSFET Drivers with Protection Features

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

The ISL6594A and ISL6594B are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with the

ISL6592 Digital Multi-Phase Buck PWM controller and

N-Channel MOSFETs form a complete core-voltage

regulator solution for advanced microprocessors.

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

The ISL6594A drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6594B drives both upper and lower gates over

a range of 5V to 12V. This drive-voltage provides the

flexibility necessary to optimize applications involving trade-

offs between gate charge and conduction losses.

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

An adaptive zero shoot-through protection is integrated to

prevent both the upper and lower MOSFETs from conducting

simultaneously and to minimize the dead time. These

products add an overvoltage protection feature operational

before VCC exceeds its turn-on threshold, at which the

PHASE node is connected to the gate of the low side

MOSFET (LGATE). The output voltage of the converter is

then limited by the threshold of the low side MOSFET, which

provides some protection to the microprocessor if the upper

MOSFET(s) is shorted during initial start-up.

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 for Power Train Design, Layout

Guidelines, and Feedback Compensation Design

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...10

中文翻译

下载PDF

与ISL6594B相关器件

型号	品牌	获取价格	描述	数据表
ISL6594BCB	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCB-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCB-T	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012-AA, SOIC-8
ISL6594BCBZ	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCBZ	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
ISL6594BCBZ-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCBZ-T	RENESAS	获取价格	Advanced Synchronous Buck MOSFET Driver with 3V PWM Interface and Advanced Protection Feat
ISL6594BCR	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCR	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10
ISL6594BCR-T	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10

与ISL6594B相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

16
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

16
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

14
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6594B

ISL6594B 技术参数

ISL6594B 数据手册

与ISL6594B相关器件

与ISL6594B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6594B

ISL6594B 技术参数

ISL6594B 数据手册

与ISL6594B相关器件

与ISL6594B相关文章

您还可以找

您在本页遇到什么问题？