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ISL6594ACBZ PDF预览

ISL6594ACBZ

更新时间: 2024-02-06 17:28:03
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
11页 608K
描述
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8

ISL6594ACBZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.76
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:3
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:
标称输出峰值电流:3 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:13.2 V
最小供电电压:10.8 V标称供电电压:12 V
电源电压1-最大:12 V电源电压1-分钟:5 V
表面贴装:YES温度等级:OTHER
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

ISL6594ACBZ 数据手册

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DATASHEET  
ISL6594A, ISL6594B  
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features  
FN9157  
Rev 6.00  
Sep 11, 2015  
The ISL6594A and ISL6594B are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
Features  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with the  
ISL6592 Digital Multi-Phase Buck PWM controller and  
N-Channel MOSFETs form a complete core-voltage  
regulator solution for advanced microprocessors.  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
The ISL6594A drives the upper gate to 12V, while the lower  
gate can be independently driven over a range from 5V to  
12V. The ISL6594B drives both upper and lower gates over  
a range of 5V to 12V. This drive-voltage provides the  
flexibility necessary to optimize applications involving  
trade-offs between gate charge and conduction losses.  
- Fast Rise/Fall Times and Low Propagation Delays  
• Three-State PWM Input for Output Stage Shutdown  
• Three-State PWM Input Hysteresis for Applications with  
Power Sequencing Requirement  
An adaptive zero shoot-through protection is integrated to  
prevent both the upper and lower MOSFETs from conducting  
simultaneously and to minimize the dead time. These  
products add an overvoltage protection feature operational  
before VCC exceeds its turn-on threshold, at which the  
PHASE node is connected to the gate of the low side  
MOSFET (LGATE). The output voltage of the converter is  
then limited by the threshold of the low side MOSFET, which  
provides some protection to the microprocessor if the upper  
MOSFET(s) is shorted during initial start-up.  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free Available (RoHS Compliant)  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
Applications  
• Core Regulators for Intel® and AMD® Microprocessors  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Brief TB417 for Power Train Design, Layout  
Guidelines, and Feedback Compensation Design  
FN9157 Rev 6.00  
Sep 11, 2015  
Page 1 of 11  

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