5秒后页面跳转
ISL6594ACB-T PDF预览

ISL6594ACB-T

更新时间: 2024-01-05 07:43:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器
页数 文件大小 规格书
10页 305K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

ISL6594ACB-T 技术参数

生命周期:Unknown零件包装代码:DFN
包装说明:HVSON, SOLCC10,.12,20针数:10
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:5 weeks
风险等级:5.46高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:S-PDSO-N10
JESD-609代码:e3长度:3 mm
湿度敏感等级:3功能数量:1
端子数量:10最高工作温度:85 °C
最低工作温度:标称输出峰值电流:3 A
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC10,.12,20封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:12 V认证状态:Not Qualified
座面最大高度:1 mm子类别:MOSFET Drivers
最大供电电压:13.2 V最小供电电压:6.8 V
标称供电电压:12 V电源电压1-最大:12 V
电源电压1-分钟:5 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn) - annealed
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm

ISL6594ACB-T 数据手册

 浏览型号ISL6594ACB-T的Datasheet PDF文件第2页浏览型号ISL6594ACB-T的Datasheet PDF文件第3页浏览型号ISL6594ACB-T的Datasheet PDF文件第4页浏览型号ISL6594ACB-T的Datasheet PDF文件第5页浏览型号ISL6594ACB-T的Datasheet PDF文件第6页浏览型号ISL6594ACB-T的Datasheet PDF文件第7页 
ISL6594A, ISL6594B  
®
Data Sheet  
May 6, 2005  
FN9157.1  
Advanced Synchronous Rectified Buck  
MOSFET Drivers with Protection Features  
Features  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
The ISL6594A and ISL6594B are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with the  
ISL6592 Digital Multi-Phase Buck PWM controller and  
N-Channel MOSFETs form a complete core-voltage  
regulator solution for advanced microprocessors.  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
The ISL6594A drives the upper gate to 12V, while the lower  
gate can be independently driven over a range from 5V to  
12V. The ISL6594B drives both upper and lower gates over  
a range of 5V to 12V. This drive-voltage provides the  
flexibility necessary to optimize applications involving trade-  
offs between gate charge and conduction losses.  
• Three-State PWM Input for Output Stage Shutdown  
• Three-State PWM Input Hysteresis for Applications With  
Power Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
An adaptive zero shoot-through protection is integrated to  
prevent both the upper and lower MOSFETs from conducting  
simultaneously and to minimize the dead time. These  
products add an overvoltage protection feature operational  
before VCC exceeds its turn-on threshold, at which the  
PHASE node is connected to the gate of the low side  
MOSFET (LGATE). The output voltage of the converter is  
then limited by the threshold of the low side MOSFET, which  
provides some protection to the microprocessor if the upper  
MOSFET(s) is shorted during initial start-up.  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free Available (RoHS Compliant)  
Applications  
• Core Regulators for Intel® and AMD® Microprocessors  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Briefs TB400 and TB417 for Power Train  
Design, Layout Guidelines, and Feedback Compensation  
Design  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2004, 2004. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  

与ISL6594ACB-T相关器件

型号 品牌 获取价格 描述 数据表
ISL6594ACBZ INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594ACBZ RENESAS

获取价格

3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
ISL6594ACBZ-T RENESAS

获取价格

3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
ISL6594ACBZ-T INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594ACR INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594ACR-T INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594ACR-T RENESAS

获取价格

3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10
ISL6594ACRZ INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594ACRZ-T INTERSIL

获取价格

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594AECB RENESAS

获取价格

HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8