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ISL6594ACB PDF预览

ISL6594ACB

更新时间: 2024-09-28 22:57:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器接口集成电路光电二极管
页数 文件大小 规格书
10页 305K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

ISL6594ACB 数据手册

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ISL6594A, ISL6594B  
®
Data Sheet  
May 6, 2005  
FN9157.1  
Advanced Synchronous Rectified Buck  
MOSFET Drivers with Protection Features  
Features  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
The ISL6594A and ISL6594B are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with the  
ISL6592 Digital Multi-Phase Buck PWM controller and  
N-Channel MOSFETs form a complete core-voltage  
regulator solution for advanced microprocessors.  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
The ISL6594A drives the upper gate to 12V, while the lower  
gate can be independently driven over a range from 5V to  
12V. The ISL6594B drives both upper and lower gates over  
a range of 5V to 12V. This drive-voltage provides the  
flexibility necessary to optimize applications involving trade-  
offs between gate charge and conduction losses.  
• Three-State PWM Input for Output Stage Shutdown  
• Three-State PWM Input Hysteresis for Applications With  
Power Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
An adaptive zero shoot-through protection is integrated to  
prevent both the upper and lower MOSFETs from conducting  
simultaneously and to minimize the dead time. These  
products add an overvoltage protection feature operational  
before VCC exceeds its turn-on threshold, at which the  
PHASE node is connected to the gate of the low side  
MOSFET (LGATE). The output voltage of the converter is  
then limited by the threshold of the low side MOSFET, which  
provides some protection to the microprocessor if the upper  
MOSFET(s) is shorted during initial start-up.  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free Available (RoHS Compliant)  
Applications  
• Core Regulators for Intel® and AMD® Microprocessors  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Briefs TB400 and TB417 for Power Train  
Design, Layout Guidelines, and Feedback Compensation  
Design  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2004, 2004. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  

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