Datasheet > ISK018NE1LM7

ISK018NE1LM7

更新时间： 2024-12-01 17:00:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1259K
描述
ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featu

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数据手册

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ISK018NE1LM7 数据手册

ISK018NE1LM7

MOSFET

OptiMOS^TMꢀ7ꢀPower-Transistor,ꢀ15ꢀV

PG-VSON-6

Pin 1

Features

•ꢀN-channel,ꢀlogicꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

tab

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsynchronousꢀrectification

(fused)

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 1,2,5,6,tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 3

Parameter

Value

Unit

Source

Pin 4

V_DS

R_DS(on),max

I_D

1.8

mΩ

129

6.7

Q_oss

Q_Gꢀ(0V...4.5V)

7.5

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISK018NE1LM7

PG-VSON-6

18E1

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-09-25

12 3 4 5 6 7...11

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