ISG52124-L
5 TO 210 MHz SILICON CATV
24 dB LOW POWER HYBRID AMPLIFIER
FEATURES
OUTLINE DIMENSIONS (Units in mm [inches])
• FLAT GAIN RESPONSE FROM 5 TO 210 MHz: f = ±0.25 dB
• INPUT AND OUTPUT MATCHING TO 75 OHMS: RL = > 18 dB
• LOW VOLTAGE = 12V
ISG52124-L
45.08 [1.775] MAX
• LOW CURRENT 90 mA TYP
38.10 ± 0.25 [1.500 ± .010]
3.49 [.137]
• AUTOMATED SURFACE MOUNT CONSTRUCTION
3.96 [.156]
+0.14
2× φ4.00
+.006
THRU
-.009
[
φ.157
]
-0.24
+0.13
-0.20
+.005
]
-.008
8.00
[
.315
14.85 [.585] MAX
8.04 [.317]
27.30 [1.075] MAX
VCC
5
1
9
DESCRIPTION
IN
OUT
5.08 ± 0.13 [.200 ± .005]
2.54 ± 0.13 [.100 ± .005]
2
3 7 8
TheISG52124-LisalowPower12VBroadbandhybridamplifier
module developed for return path optical and RF applications
in(HFC)CATVsystems.TheISG52124-Lis comprisedof100%
surface mount components, including high performance silicon
transistors.Itfeaturesexcellentnoise,gain,andthermalstability
acrossawiderangeofoperatingconditionsandfrequencies.The
amplifiers are manufactured to ISO9002 standards are very
rugged and exhibit excellent unit to unit uniformity.
0.51 ± 0.05 [.020 ± .002]
GND
+4.15
-3.85
+.163
2× φ
[
φ
]
-.152
21.08 [.830]
+0.25
-0.89
+.010
-.035
12.70
[
.500
]
8.60 ± 0.25
[.340 ± .010]
10.75 ± 0.25 [.423 ± .010]
2.54 ± 0.38 [.100 ± .015]
4.20 ± 0.13 [.165 ± .005]
2× 6-32 UNC-2B
10.20 ± 0.25 [.402 ± .010]
9.84 [.387] 25.40 ± 0.25 [1.000 ± .010]
17.44 [.687]
ELECTRICAL CHARACTERISTICS (VCC = 12 V, ± 10%, TA = 25°C, 75 Ohm System)
PART NUMBER
ISG52124-L
TYP
SYMBOLS
PARAMETERS AND CONDITIONS
Supply Voltage
UNITS
MIN
MAX
V
mA
12
90
OperatingCurrent
80
5
120
210
BW
GA
Bandwidth
MHz
dB
Gain at f = 42 MHz
23.5
24
24.5
±0.25
∆G
GainFlatness
dB
RLIN
RLOUT
NF
Input Return Loss
dB
18
18
Output Return Loss
dB
Noise Figure at f = 65 MHz
Output Power at 1 dB Gain Compression Point
Composite Triple Beat1 (+50 dBmV/ch)
Cross Modulation1 (+50 dBmV/ch)
2nd Order Distortion1 (+50 dBmV/ch)
Characteristic Impedance
dB
4.5
72
5
P1dB
CTB
XM
dBmV
dBc
dBc
dBc
ohms
70
-63
-56
-66
75
-60
-53
-62
CSO
Note:
1. Composite Triple Beat, Cross Modulation, 2nd Order Distortion are all measured with 7 channels (T7-T13). at 50 dBmV/ch output and at25°C.
Performance tests and ratings for Sirenza Microdevices products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the
approximate performance of the products as measured by those tests. Any difference in circuit implementation, test software, or test equipment may affect actual performance. The
information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the
users own risk. Prices and specifications for Sirenza Microdevices products are subject to change without notice. Buyers should consult Sirenza Microdevices standard terms and
conditions of sale for Sirenzas limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party.
Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 S. Technology Court, Broomfield, CO 80021
303-327-3030
www.sirenza.com
4/1/2005
REV. A
1
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