Datasheet > ISG0613N04NM6HSC

ISG0613N04NM6HSC

更新时间： 2024-11-25 17:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1019K
描述
Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 m? each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%.

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ISG0613N04NM6HSC 数据手册

ISG0613N04NM6HSC

MOSFET

OptiMOS^TM6ꢀPower-Transistor,ꢀ40ꢀV

PGꢀ-WHITFN-10-1

Features

•ꢀSymmetricalꢀHalfꢀBridge

tab

•ꢀOptimizedꢀforꢀlowꢀvoltageꢀdrivesꢀandꢀbatteryꢀpoweredꢀapplications

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS

•ꢀN-channel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Q1 Drain

Pin 6-7

Productꢀvalidation

Q1 Gate

Pin 5

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

1 Q1 Source

2 Q1 Source

3 Q2 Drain

4 Q2 Drain

tab

Q2 Gate

Pin 10

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Q2 Source

Pin 8-9

Parameter

Value

Unit

*1: Internal body diode

V_DS

R_DS(on),max

I_D

0.88

299

mΩ

Q_oss

Q_Gꢀ(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

61304N6HC

RelatedꢀLinks

ISG0613N04NM6HSC

PG -WHITFN-10-1

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-12-05

12 3 4 5 6 7...11

中文翻译

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