Datasheet > ISD1447AS1

ISD1447AS1

更新时间： 2024-09-18 12:31:15

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
3页	243K
描述
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ISD1447AS1 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

ISD1447AS1

FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

ISD1447AS1 is a silicon NPN epitaxial type transistor designed

for 2 to 3.5W output low frequency power amplify application.

Complementary with ISB1035AS1.

4.0

FEATURE

0.1

●High collector current. I_CM= 1.5A

●High gain band width product. fT= 100MHz typ

●High collecot dissipation. Pc= 600mW

●Excellent linearity of DC forward current gain.

0.45

2.5

APPLICATION

2 to 3.5W output low frequency amplify circuit of radio,

cassette tape recorder, mini stereo.

① ② ③

JEITA：

JEDEC：

TERMINAL CONNECTER

①：EMITTER

MAXIMUM RATINGS（Ta=25℃）

②：COLLECTOR

③：BASE

Symbol

Parameter

Ratings

Unit

VCBO

VEBO

VCEO

I_C

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

I_CM

Peak collector current

Collector dissipation

1.5

P_c

600

℃

T_j

Junction temperature

Storage temperature

+150

-55～+150

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Test conditions

Unit

Min

Typ

Max

V(BR)CBO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I_C= 10μA , I_E=0mA

I_E= 10μA , I_C=0mA

I_C= 100μA , RBE= ∞

V _CB= 25V , I _E= 0mA

V _EB=2V , I _C= 0mA

V(BR)EBO

V(BR)CEO

ICBO

μA

IEBO

hFE※

VCE(sat)

DC forward current gain

C to E Saturation Voltage

Gain band width product

V _CE= 1V , I_C= 500mA

I _C=500mA , I _B= 25mA

V _CE=6V , I _E= -10mA

300

0.5

100

MHz

Item

※） It shows hFE classification in right table.

hFE item

55～110

90～180

150～300

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

下载PDF

与ISD1447AS1相关器件

型号	品牌	获取价格	描述	数据表
ISD14B00	NUVOTON	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE
ISD14B20	WINBOND	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 10.6- TO 32-SECONDS DURATION
ISD14B20	NUVOTON	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE
ISD14B20X	WINBOND	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 10.6- TO 32-SECONDS DURATION
ISD14B40	NUVOTON	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE
ISD14B80	NUVOTON	获取价格	SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE
ISD1506P	ETC	获取价格	Solid-State Recorder
ISD1510P	ETC	获取价格	Solid-State Recorder
ISD1510S	ETC	获取价格	Solid-State Recorder
ISD1520P	ETC	获取价格	Solid-State Recorder