是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP28,.6 |
针数: | 28 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.22 |
商用集成电路类型: | SPEECH SYNTHESIZER WITH RCDG | JESD-30 代码: | R-PDIP-T28 |
长度: | 36.83 mm | 功能数量: | 1 |
端子数量: | 28 | 片上内存类型: | EEPROM |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP28,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
最长读取时间: | 20 s | 座面最大高度: | 4.83 mm |
子类别: | Audio Synthesizer ICs | 最大压摆率: | 30 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISD1420S | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28 | |
ISD1420SI | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28 | |
ISD1420SY | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOIC-28 | |
ISD1420SYI | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOIC-28 | |
ISD1420X | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, DIE-25 | |
ISD1420XC5006 | WINBOND |
获取价格 |
Speech Synthesizer With RCDG, 20s, CMOS, DIE-25 | |
ISD1420XI | ETC |
获取价格 |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations | |
ISD1447AS1 | ISAHAYA |
获取价格 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | |
ISD14B00 | NUVOTON |
获取价格 |
SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE | |
ISD14B20 | WINBOND |
获取价格 |
SINGLE-CHIP, MULTIPLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 10.6- TO 32-SECONDS DURATION |