Datasheet > ISCW18123

ISCW18123

更新时间： 2022-02-26 14:10:19

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	336K
描述
isc N-Channel MOSFET Transistor

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ISCW18123 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

ISCW18116

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤130mΩ

·Enhancement mode

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·APPLICATIONS

·Fast switching power application

·Uninterruptible Power Supply

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

112

P_D

260

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(j-c)

PARAMETER

MAX

UNIT

Channel-to-case thermal resistance

℃/W

0.48

Channel-to-ambient thermal resistance

Rth(j-a)

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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