Datasheet > ISC16DP15LM

ISC16DP15LM

更新时间： 2024-09-14 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1243K
描述
OptiMOS? P-channel MOSFETs 150 V?in SuperSO8?package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)?range and improves efficiency at low loads due to low Qg.

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ISC16DP15LM 数据手册

ISC16DP15LM

MOSFET

OptiMOS^TMꢀPower-Transistor,ꢀ-150ꢀV

SuperSO8

Features

•ꢀP-Channel

•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV

•ꢀ100%ꢀavalancheꢀtested

•ꢀLogicꢀLevel

•ꢀEnhancementꢀmode

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 4

Parameter

Value

-150

160

Unit

Source

Pin 1-3

V_DS

*1: Internal body diode

R_DS(on),max

I_D

mΩ

-22

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

16DP15LM

RelatedꢀLinks

ISC16DP15LM

PG-TDSON-8

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-10-07

12 3 4 5 6 7...11

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