2SA1261

更新时间： 2024-02-05 00:38:22

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	89K
描述
Silicon PNP Power Transistors

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技术参数
数据手册

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2SA1261 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1261 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1261

DESCRIPTION

·With TO-220 package

·High switching speed

·Low collector saturation voltage

·Complement to type 2SC3157

APPLICATIONS

·For high voltage ,high speed and

power switching applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-220) and symbol

ABSOLUTE MAXIMUM RATINGS (T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-100

-7

UNIT

Open emitter

Open base

Open collector

-10

I_CM

Collector current-Peak

Base current

-20

I_B

-3.5

T_a=25℃

T_C=25℃

1.5

P_T

Total power dissipation

Junction temperature

Storage temperature

150

℃

T_j

-55~150

T_stg

12 3

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