2SA1216

更新时间： 2024-01-26 22:33:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	116K
描述
isc Silicon PNP Power Transistor

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技术参数
数据手册

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2SA1216 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SA1216 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1216

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V_(BR)CEO= -180V(Min)

·Good Linearity of h_FE

·Complement to Type 2SC2922

APPLICATIONS

·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-180

-5

UNIT

Collector Current-Continuous

Base Current-Continuous

-17

I_B

-5

Collector Power Dissipation

@ T_C=25℃

P_C

200

℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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