5秒后页面跳转
2SA1215Y PDF预览

2SA1215Y

更新时间: 2024-01-03 00:47:49
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 214K
描述
Transistor

2SA1215Y 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.39
最大集电极电流 (IC):15 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):90
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

2SA1215Y 数据手册

 浏览型号2SA1215Y的Datasheet PDF文件第2页浏览型号2SA1215Y的Datasheet PDF文件第3页浏览型号2SA1215Y的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1215  
DESCRIPTION  
·With MT-200 package  
·Complement to type 2SC2921  
APPLICATIONS  
·Audio and general purpose  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (MT-200) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-160  
-160  
-5  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
-15  
A
IB  
Base current  
-4  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
150  
W
Tj  
150  
Tstg  
-55~150  

与2SA1215Y相关器件

型号 品牌 描述 获取价格 数据表
2SA1216 JMNIC Silicon PNP Power Transistors

获取价格

2SA1216 MOSPEC POWER TRANSISTORS(17A,180V,200W)

获取价格

2SA1216 Wing Shing PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

获取价格

2SA1216 SANKEN Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

获取价格

2SA1216 NJSEMI New Jersey Semi-Conductor Products,

获取价格

2SA1216 ALLEGRO Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

获取价格