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2SA1110 PDF预览

2SA1110

更新时间: 2024-01-30 05:33:12
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 170K
描述
Silicon PNP Power Transistors

2SA1110 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SA1110 数据手册

 浏览型号2SA1110的Datasheet PDF文件第2页浏览型号2SA1110的Datasheet PDF文件第3页浏览型号2SA1110的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1110  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SC2590  
·Excellent current IC characteristics of forward  
current transfer ratio hFE vs. collector  
·High transition frequency fT  
·Optimum for the driver stage of a 40w to  
60w output amplifier  
APPLICATIONS  
·For low-frequency power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute Maximun Ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-120  
-120  
-5  
UNIT  
V
Open base  
V
Open collector  
V
Collector current (DC)  
Collector current-Peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
-0.5  
A
ICM  
-1.0  
A
PC  
TC=25  
1.2*  
W
Tj  
150  
Tstg  
-55~150  
Note) *: Without heat sink  

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