2SA1012

更新时间： 2024-01-02 00:53:21

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	114K
描述
isc Silicon PNP Power Transistor

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2SA1012 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1012

DESCRIPTION

·Low Collector Saturation Voltage

:V_CE(sat)= -0.4(V)(Max)@I_C= -3A

·High Switching Speed

·Complement to Type 2SC2562

APPLICATIONS

·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-60

UNIT

-50

-5

Collector Current-Continuous

-5

Total Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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