2SA1006BQ

更新时间： 2024-01-20 09:40:09

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	87K
描述
Transistor

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技术参数
数据手册

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2SA1006BQ 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SA1006BQ 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1006A

DESCRIPTION

·Good Linearity of h_FE

·High Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -200V(Min)

·Wide Area of Safe Operation

·Complement to Type 2SC2336A

APPLICATIONS

·Adudio frequency power amplifier

·High frequency power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-200

-5.0

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

-1.5

I_CM

-3.0

Collector Power Dissipation@ T_a=25℃

Total Power Dissipation@ T_C=25℃

Junction Temperature

1.5

P_C

T_J

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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与2SA1006BQ相关器件

型号	品牌	描述	获取价格	数据表
2SA1006BR	ISC	Transistor	获取价格
2SA1006BR	NEC	Power Bipolar Transistor, 1.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy	获取价格
2SA1006P	NEC	Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy	获取价格
2SA1006P	ISC	Transistor	获取价格
2SA1006Q	NEC	Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy	获取价格
2SA1006R	ISC	Transistor	获取价格