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2N6494 PDF预览

2N6494

更新时间: 2024-02-28 22:38:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 39K
描述
Silicon NPN Power Transistors

2N6494 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.57Is Samacsys:N
Base Number Matches:1

2N6494 数据手册

 浏览型号2N6494的Datasheet PDF文件第2页浏览型号2N6494的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6492  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High DC current gain  
·DARLINGTON  
APPLICATIONS  
·General-purpose power amplifier and  
low frequency swithing applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
55  
UNIT  
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
45  
V
Open collector  
5
V
15  
A
PD  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
100  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.75  
/W  

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