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2N6474

更新时间: 2024-01-23 21:56:44
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 60K
描述
Silicon NPN Power Transistors

2N6474 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):2JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6474 数据手册

 浏览型号2N6474的Datasheet PDF文件第2页浏览型号2N6474的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6473 2N6474  
DESCRIPTION  
·With TO-220 package  
·Low collector saturation voltage  
·Excellent safe operating area  
APPLICATIONS  
·General-purpose medium power for  
switching and amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
110  
130  
100  
120  
5
UNIT  
2N6473  
2N6474  
2N6473  
2N6474  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
4
IB  
Base current  
2
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
40  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
3.125  
/W  

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