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2N6261 PDF预览

2N6261

更新时间: 2024-02-13 16:35:48
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 125K
描述
Silicon NPN Power Transistors

2N6261 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):0.8 MHzBase Number Matches:1

2N6261 数据手册

 浏览型号2N6261的Datasheet PDF文件第2页浏览型号2N6261的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6261  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Wide safe operating area  
APPLICATIONS  
·Power switching circuits  
·Series and shunt-regulator driver  
and output stages  
·High-fidelity amplifers  
·Solenoid drivers  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolutaxmum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter votage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
90  
Open base  
80  
V
Open collector  
7
V
4
2
A
IB  
Base current  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
3.5  
/W  

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