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2N5743 PDF预览

2N5743

更新时间: 2024-02-06 06:42:36
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 126K
描述
Silicon PNP Power Transistors

2N5743 技术参数

生命周期:Obsolete零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-213AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz

2N5743 数据手册

 浏览型号2N5743的Datasheet PDF文件第2页浏览型号2N5743的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5743 2N5744  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Fast switching speed  
APPLICATIONS  
·For general–purpose switching  
and power amplifier applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
l
Absolute maum ratings(Ta=)  
SYMBO
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2N5743  
2N5744  
2N5743  
2N5744  
VCBO  
Collector-base voltage  
Open emitter  
V
-100  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-20  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=100  
25  
W
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
0.875  
/W  

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