2N5632

更新时间： 2024-02-04 06:47:42

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	118K
描述
Silicon NPN Power Transistors

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技术参数
数据手册

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2N5632 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Base Number Matches：	1

2N5632 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5632 2N5633 2N5634

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High DC current gain

APPLICATIONS

·For general-purpose power amplifier

and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

100

UNIT

2N5632

2N5633

2N5634

2N5632

2N5633

2N5634

V_CBO

Collector-base voltage

Open emitter

120

140

100

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

120

140

V_EBO

I_C

Emitter-base voltage

Collector current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

150

℃

150

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.1

℃/W

12 3

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