2N5611A

更新时间： 2024-02-29 14:41:50

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	130K
描述
Silicon PNP Power Transistors

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技术参数
数据手册

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2N5611A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2N5611A 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5611A

DESCRIPTION

·With TO-66 package

·Excellent safe operating area

·Low collector saturation voltage

APPLICATIONS

·For general-purpose amplifier ;

and switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-120

-100

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-5

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

4.37

℃/W

12 3

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