2N5611

更新时间： 2024-01-15 22:23:18

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	127K
描述
Silicon PNP Power Transistors

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N5611 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2N5611 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611

DESCRIPTION

·With TO-66 package

·Excellent safe operating area

·Low collector saturation voltage

APPLICATIONS

·For general-purpose amplifier ;

and switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-80

UNIT

2N5605

V_CBO

Collector-base voltage

Open emitter

2N5607/5609

2N5611

-100

-120

-60

2N5605

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

2N5607/5609

2N5611

-80

-100

-5

V_EBO

I_C

Emitter-base voltage

Collector current

-5

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

℃

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

4.37

℃/W

12 3

下载PDF

与2N5611相关器件

型号	品牌	描述	获取价格	数据表
2N5611A	SAVANTIC	Silicon PNP Power Transistors	获取价格
2N5611A	ISC	Silicon PNP Power Transistors	获取价格
2N5611A	SEME-LAB	Bipolar PNP Device in a Hermetically sealed TO66	获取价格
2N5611E3	MICROSEMI	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,	获取价格
2N5612	ISC	Silicon NPN Power Transistors	获取价格
2N5612	APITECH	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2	获取价格