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2N3448

更新时间: 2024-01-21 23:18:37
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 130K
描述
Silicon NPN Power Transistors

2N3448 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):7.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

2N3448 数据手册

 浏览型号2N3448的Datasheet PDF文件第2页浏览型号2N3448的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N3448  
DESCRIPTION  
·With TO-3 package  
·Excellent Safe Operating Area  
APPLICATIONS  
·Designed for medium-switching  
and amplifier applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
100  
UNIT  
V
Open base  
100  
V
Open collector  
7
V
7.5  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
115  
W
Tj  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.17  
/W  
R(th) jc  

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