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IS93C56A PDF预览

IS93C56A

更新时间: 2024-02-19 22:43:49
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
16页 131K
描述
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C56A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.68
备用内存宽度:8最大时钟频率 (fCLK):3 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.3218 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X16封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:4.57 mm串行总线类型:MICROWIRE
最大待机电流:0.000004 A子类别:EEPROMs
最大压摆率:0.002 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):5 ms
写保护:SOFTWAREBase Number Matches:1

IS93C56A 数据手册

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®
IS93C56A IS93C66A  
ISSI  
2K-BIT/4K-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
MAY 2006  
FEATURES  
DESCRIPTION  
• Industry-standard Microwire Interface  
— Non-volatile data storage  
The IS93C56A/66A are 2kb/4kb non-volatile,  
®
ISSI serial EEPROMs. They are fabricated using  
an enhanced CMOS design and process. The  
IS93C56A/66A contain power-efficient read/write  
memory, and organization of either 256/512 bytes  
of 8 bits or 128/256 words of 16 bits. When the  
ORG pin is connected to Vcc or left unconnected,  
x16 is selected; when it is connected to ground,  
x8 is selected. The IS93C56A/66A are fully  
backward compatible with IS93C56/66.  
— Wide voltage operation:  
Vcc = 1.8V to 5.5V  
— Auto increment for efficient data dump  
• User Configured Memory Organization  
— By 16-bit or by 8-bit  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Software instructions for write-enable/disable  
• Enhanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-use Interface  
— Self-timed programming cycle  
— Automatic erase-before-write  
— Programming status indicator  
— Word and chip erasable  
An instruction set defines the operation of the  
devices, including read, write, and mode-enable  
functions. To protect against inadvertent data  
modification, all erase and write instructions are  
accepted only while the devices are write-enabled.  
A selected x8 byte or x16 word can be modified  
with a single WRITE or ERASE instruction.  
Additionally, the two instructions WRITE ALL or  
ERASE ALL can program an entire array. Once a  
device begins its self-timed program procedure,  
the data out pin (Dout) can indicate the READY/  
BUSY status by raising chip select (CS). The self-  
timed write cycle includes an automatic erase-  
before-write capability. The devices can output  
any number of consecutive bytes/words using a  
single READ instruction.  
— Chip select enables power savings  
• Durable and reliable  
— 40-year data retention after 1M write cycles  
— 1 million write cycles  
— Unlimited read cycles  
— Schmitt-trigger inputs  
• Industrial and Automotive Temperature Grade  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
D
OUT  
DATA  
REGISTER  
INSTRUCTION  
REGISTER  
R/W  
AMPS  
D
IN  
EEPROM  
ARRAY  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
ADDRESS  
DECODER  
CS  
256/512x8  
128/256x16  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. A  
05/02/06  

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