是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SON | 包装说明: | VSON, SOLCC8,.11,20 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.74 | Is Samacsys: | N |
备用内存宽度: | 8 | 最大时钟频率 (fCLK): | 3 MHz |
数据保留时间-最小值: | 40 | 耐久性: | 1000000 Write/Erase Cycles |
JESD-30 代码: | R-XDSO-N8 | JESD-609代码: | e3 |
长度: | 3 mm | 内存密度: | 1024 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 16 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 64 words |
字数代码: | 64 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 64X16 | 封装主体材料: | UNSPECIFIED |
封装代码: | VSON | 封装等效代码: | SOLCC8,.11,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 260 |
电源: | 2/5 V | 认证状态: | Not Qualified |
座面最大高度: | 0.8 mm | 串行总线类型: | MICROWIRE |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.003 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.8 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 2 mm | 最长写入周期时间 (tWC): | 10 ms |
写保护: | SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS93C46D-2GI | ISSI |
获取价格 |
EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | |
IS93C46D-2GLI | ISSI |
获取价格 |
EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | |
IS93C46D-2GRI | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM | |
IS93C46D-2GRLI | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM | |
IS93C46D-2NLI | ISSI |
获取价格 |
暂无描述 | |
IS93C46D-2PI | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM | |
IS93C46D-2PLI | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM | |
IS93C46D-3GRA3 | ISSI |
获取价格 |
EEPROM, 64X16, Serial, CMOS, PDSO8, SOIC-8 | |
IS93C46D-3GRLA3 | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM | |
IS93C46D-3PLA3 | ISSI |
获取价格 |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM |