Datasheet > 存储 > EEPROM> IS93C46D

IS93C46D

更新时间： 2024-02-29 21:59:49

品牌	Logo	应用领域
美国芯成 - ISSI		可编程只读存储器
页数	文件大小	规格书
16页	548K
描述
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS93C46D 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
数据保留时间-最小值：	10	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDIP-T8	JESD-609代码：	e0
内存密度：	1024 bit	内存集成电路类型：	EEPROM
内存宽度：	16	端子数量：	8
字数：	64 words	字数代码：	64
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64X16	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP8,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	SERIAL	电源：	5 V
认证状态：	Not Qualified	串行总线类型：	MICROWIRE
最大待机电流：	0.000002 A	子类别：	EEPROMs
最大压摆率：	0.005 mA	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	写保护：	SOFTWARE

IS93C46D 数据手册

IS93C46D

1-KBIT SERIAL ELECTRICALLY

ERASABLE PROM

PRELIMINARYINFORMATION

JANUARY 2007

FEATURES

• Industry-standard Microwire Interface

— Non-volatile data storage

DESCRIPTION

The IS93C46D is a 1Kb non-volatile, ISSI serial

EEPROM. It is fabricated using an enhanced

CMOS design and process. The IS93C46D

contains power-efficient read/write memory, and

organization of 128 bytes of 8 bits or 64 words of

16 bits. When the ORG pin is connected to Vcc

or left unconnected, x16 is selected; when it is

connected to ground, x8 is selected.

— Wide voltage operation:

Vcc = 1.8V to 5.5V

— Full TTL compatible inputs and outputs

— Auto increment for efficient data dump

• User Configured Memory Organization

— By 16-bit or by 8-bit

• Hardware and software write protection

— Defaults to write-disabled state at power-up

— Software instructions for write-enable/disable

• Enhanced low voltage CMOS E²PROM

technology

• Versatile, easy-to-use Interface

— Self-timed programming cycle

— Automatic erase-before-write

— Programming status indicator

— Word and chip erasable

An instruction set defines the operation of the

devices, including read, write, and mode-enable

functions. To protect against inadvertent data

modification, all erase and write instructions are

accepted only while the device is write-enabled. A

selected x8 byte or x16 word can be modified with

a single WRITE or ERASE instruction.

Additionally, the two instructions WRITE ALL or

ERASE ALL can program the entire array. Once

a device begins its self-timed program procedure,

the data out pin (Dout) can indicate the READY/

BUSY status by raising chip select (CS). The self-

timed write cycle includes an automatic erase-

before-write capability. The device can output any

number of consecutive bytes/words using a single

READ instruction.

— Chip select enables power savings

• Durable and reliable

— 40-year data retention after 1M write cycles

— 1 million write cycles

— Unlimited read cycles

— Schmitt-trigger inputs

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

DUMMY

BIT

OUT

DATA

INSTRUCTION

R/W

AMPS

EEPROM

ARRAY

ADDRESS

INSTRUCTION

DECODE,

CONTROL,

AND

ADDRESS

DECODER

128x8

64x16

CLOCK

GENERATION

HIGH VOLTAGE

GENERATOR

WRITE

ENABLE

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00G

01/15/07

12 3 4 5 6 7...16

中文翻译

下载PDF

与IS93C46D相关器件

型号	品牌	获取价格	描述	数据表
IS93C46D-2DLI	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D-2GI	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8
IS93C46D-2GLI	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8
IS93C46D-2GRI	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D-2GRLI	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D-2NLI	ISSI	获取价格	暂无描述
IS93C46D-2PI	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D-2PLI	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D-3GRA3	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDSO8, SOIC-8
IS93C46D-3GRLA3	ISSI	获取价格	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

与IS93C46D相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

16
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

15
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

13
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

IS93C46D

IS93C46D 技术参数

IS93C46D 数据手册

与IS93C46D相关器件

与IS93C46D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS93C46D

IS93C46D 技术参数

IS93C46D 数据手册

与IS93C46D相关器件

与IS93C46D相关文章

您还可以找

您在本页遇到什么问题？