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IS93C46B-3GR PDF预览

IS93C46B-3GR

更新时间： 2024-09-30 03:44:35
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
13页 67K
描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

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中文翻译

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IS93C46B-3GR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.88
最大时钟频率 (fCLK)：1 MHz数据保留时间-最小值：40
耐久性：1000000 Write/Erase CyclesJESD-30 代码：R-PDSO-G8
JESD-609代码：e0长度：4.9 mm
内存密度：1024 bit内存集成电路类型：EEPROM
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：8
字数：64 words字数代码：64
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64X16
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/5 V
认证状态：Not Qualified座面最大高度：1.73 mm
串行总线类型：MICROWIRE最大待机电流：0.00001 A
子类别：EEPROMs最大压摆率：0.003 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：2.7 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
最长写入周期时间 (tWC)：10 ms写保护：SOFTWARE
Base Number Matches：1

IS93C46B-3GR 数据手册

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®
IS93C46B  
ISSI  
1,024-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
JULY 2003  
FEATURES  
DESCRIPTION  
• Industry-standard Microwire Interface  
— Non-volatile data storage  
The IS93C46B is a low-cost 1kb non-volatile,  
ISSI serial EEPROM. It is fabricated using an  
®
— Low voltage operation:  
enhanced CMOS design and process. The  
IS93C46B contains power-efficient read/write  
memory, and organization of 64 words of 16 bits.  
The IS93C46B is fully backward compatible with  
IS93C46.  
Vcc = 2.5V to 5.5V  
— Full TTL compatible inputs and outputs  
— Auto increment for efficient data dump  
• x16 bit organization  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Software instructions for write-enable/disable  
• Enhanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-use Interface  
— Self-timed programming cycle  
— Automatic erase-before-write  
— Programming status indicator  
— Word and chip erasable  
An instruction set defines the operation of the  
devices, including read, write, and mode-enable  
functions. To protect against inadvertent data  
modification, all erase and write instructions are  
accepted only while the device is write-enabled. A  
selected x16 word can be modified with a single  
WRITE or ERASE instruction. Additionally, the  
two instructions WRITE ALL or ERASE ALL can  
program the entire array. Once a device begins  
its self-timed program procedure, the data out pin  
(Dout) can indicate the READY/BUSY status by  
raising chip select (CS). The self-timed write cycle  
includes an automatic erase-before-write  
capability. The device can output any number of  
consecutive words using a single READ  
— Chip select enables power savings  
• Durable and reliable  
— 40-year data retention after 1M write cycles  
— 1 million write cycles  
— Unlimited read cycles  
— Schmitt-trigger inputs  
instruction.  
• Industrial and Automotive Temperature Grade  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
DOUT  
DATA  
REGISTER  
INSTRUCTION  
REGISTER  
R/W  
AMPS  
DIN  
EEPROM  
ARRAY  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
ADDRESS  
DECODER  
CS  
64x16  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
R e v . A  
1
07/23/03  
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IS93C46B-3PLI ISSI

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IS93C46D ISSI

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