Datasheet > 存储 > EEPROM> IS93C46B

IS93C46B

更新时间： 2024-11-21 03:44:35

品牌	Logo	应用领域
美国芯成 - ISSI		可编程只读存储器
页数	文件大小	规格书
13页	67K
描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

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IS93C46B 数据手册

IS93C46B

ISSI

1,024-BIT SERIAL ELECTRICALLY

ERASABLE PROM

JULY 2003

FEATURES

DESCRIPTION

• Industry-standard Microwire Interface

— Non-volatile data storage

The IS93C46B is a low-cost 1kb non-volatile,

ISSI serial EEPROM. It is fabricated using an

— Low voltage operation:

enhanced CMOS design and process. The

IS93C46B contains power-efficient read/write

memory, and organization of 64 words of 16 bits.

The IS93C46B is fully backward compatible with

IS93C46.

Vcc = 2.5V to 5.5V

— Full TTL compatible inputs and outputs

— Auto increment for efficient data dump

• x16 bit organization

• Hardware and software write protection

— Defaults to write-disabled state at power-up

— Software instructions for write-enable/disable

• Enhanced low voltage CMOS E²PROM

technology

• Versatile, easy-to-use Interface

— Self-timed programming cycle

— Automatic erase-before-write

— Programming status indicator

— Word and chip erasable

An instruction set defines the operation of the

devices, including read, write, and mode-enable

functions. To protect against inadvertent data

modification, all erase and write instructions are

accepted only while the device is write-enabled. A

selected x16 word can be modified with a single

WRITE or ERASE instruction. Additionally, the

two instructions WRITE ALL or ERASE ALL can

program the entire array. Once a device begins

its self-timed program procedure, the data out pin

(Dout) can indicate the READY/BUSY status by

raising chip select (CS). The self-timed write cycle

includes an automatic erase-before-write

capability. The device can output any number of

consecutive words using a single READ

— Chip select enables power savings

• Durable and reliable

— 40-year data retention after 1M write cycles

— 1 million write cycles

— Unlimited read cycles

— Schmitt-trigger inputs

instruction.

• Industrial and Automotive Temperature Grade

FUNCTIONAL BLOCK DIAGRAM

DUMMY

BIT

DOUT

DATA

INSTRUCTION

R/W

AMPS

DIN

EEPROM

ARRAY

ADDRESS

INSTRUCTION

DECODE,

CONTROL,

AND

ADDRESS

DECODER

64x16

CLOCK

GENERATION

HIGH VOLTAGE

GENERATOR

WRITE

ENABLE

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

R e v . A

07/23/03

12 3 4 5 6 7...13

中文翻译

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与IS93C46B相关器件

型号	品牌	获取价格	描述	数据表
IS93C46B-3G	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3GI	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3GR	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3GRA	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3GRI	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3P	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3PA	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3PI	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46B-3PLI	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, DIP-8
IS93C46B-3Z	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

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