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IS75V16F96GS08-7065BI PDF预览

IS75V16F96GS08-7065BI

更新时间： 2024-02-25 21:55:47
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
77页 332K
描述
Memory Circuit, 4MX16, CMOS, PBGA107, 9 X 10 MM, 0.80 MM PITCH, BGA-107

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IS75V16F96GS08-7065BI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：9 X 10 MM, 0.80 MM PITCH, BGA-107针数：107
Reach Compliance Code：compliantHTS代码：8542.32.00.71
风险等级：5.92其他特性：PSRAM ORGANIZED AS 2M X 16; FLASH2 ORGANIZED AS 2M X 16
JESD-30 代码：R-PBGA-B107JESD-609代码：e0
长度：10 mm内存密度：67108864 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：107
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：LFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.4 mm最大供电电压 (Vsup)：3.1 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：9 mmBase Number Matches：1

IS75V16F96GS08-7065BI 数据手册

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®
IS75V16F96GS32  
ISSI  
3.0 Volt Multi-Chip Package (MCP)  
— 96 Mbit Simultaneous Operation Flash  
Memory and 32 Mbit Pseudo SRAM  
PRELIMINARY INFORMATION  
OCTOBER 2002  
MCP FEATURES  
• Erase Algorithms:  
Automatically preprograms/erases the FLASH memory  
entirely, or by sector  
• Power supply voltage 2.7V to 3.1V  
• High performance:  
• Program Algorithms:  
Flash: 70ns maximum access time  
PSRAM: 65ns maximum access time  
Automatically writes and verifies data at specified  
address  
• Package: 107-ball BGA  
• Operating Temperature: -25C to +85C  
• Hidden ROM Region:  
256 byte with a Factory-serialized secure electronic  
serial number (ESN), which is accessible through a  
command sequence  
FLASH FEATURES  
• Power Dissipation:  
• Data Polling and Toggle Bit:  
Read Current at 1 Mhz: 4 mA maximum  
Read Current at 5 Mhz:18 mA maximum  
Sleep Mode: 5 µA maximum  
Detects the completion of the program or erase cycle  
• Ready-Busy Outputs (RY/BY)  
Detection of program or erase cycle completion each  
FLASH chip  
• User Configurable Banks  
FLASH 1 (64 Mbit)  
• Over 100,000 write/erase cycles  
Bank A1: 8Mbit (8KB x 8 and 64KB x 15)  
Bank B1: 24Mbit (64KB x 48)  
Bank C1: 24Mbit (64KB x 48)  
• Low supply voltage (Vccf ≤ 2.5V) inhibits writes  
• WP/ACC input pin:  
If VIL, allows partial protection of boot sectors  
Bank D1: 8Mbit (8KB x 8 and 64KB x 15)  
If VIH, allows removal of boot sector protection  
FLASH 2 (32 Mbit - Bottom Boot)  
Bank A2: 4Mbit (8KB x 8 and 64KB x 7)  
Bank B2: 12Mbit (64KB x 24)  
If Vacc, program time is improved  
PSRAM FEATURES (32 Mb density)  
Bank C2: 12Mbit (64KB x 24)  
• Power Dissipation:  
Bank D2: 4Mbit (64KB x 8)  
User chooses two virtual banks from a combina-  
tion of four physical banks  
Operating: 25 mA maximum  
Standby: 100 µA maximum  
• Simultaneous R/W Operations (dual virtual bank):  
Zero latency between read and write operations;  
Data can be programmed or erased in one bank  
while data is simultaneously being read from the  
other bank  
• Chip Selects: CE1r, CE2r  
• Power down feature using CE2r  
Sleep Mode: 10 µA maximum  
Nap: 60 µA maximum  
8 mbit Partial: 70 µA maximum  
• Low-Power Mode:  
• Data retention supply voltage: 2.1 to 3.1 volts  
A period of no activity causes FLASH to enter a  
low-power state  
• Byte data control: LB (DQ0–DQ7), UB  
• Erase Suspend/Resume:  
(DQ8–DQ15)  
Suspends of erase activity to allow a read in the  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products. FlexBankTM is a trademark  
of Fujitsu Limited, Japan. Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
PRELIMINARY INFORMATION Rev. 00B  
1
10/31/02  
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