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IS65C10248AL-55CTLA3 PDF预览

IS65C10248AL-55CTLA3

更新时间: 2024-11-29 05:39:35
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 367K
描述
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS65C10248AL-55CTLA3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
Is Samacsys:N最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e3长度:18.41 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
最大待机电流:0.00018 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:10.16 mm
Base Number Matches:1

IS65C10248AL-55CTLA3 数据手册

 浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第2页浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第3页浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第4页浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第5页浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第6页浏览型号IS65C10248AL-55CTLA3的Datasheet PDF文件第7页 
IS62C10248AL  
IS65C10248AL  
1M x 8 LOW VOLTAGE,  
ULTRA LOW POWER CMOS STATIC RAM  
PRELIMINARY INFORMATION  
OCTOBER 2009  
FEATURES  
DESCRIPTION  
Theꢀ ISSIꢀ IS62C10248AL/IS65C10248ALꢀ areꢀ ꢀ high-  
speed,ꢀ 8Mꢀ bitꢀ staticꢀ RAMsꢀ organizedꢀ asꢀ 1Mꢀ wordsꢀ byꢀ  
8ꢀ bits.ꢀ Itꢀ isꢀ fabricatedꢀ usingꢀ ISSI'sꢀ high-performanceꢀ  
CMOStechnology.Thishighlyreliableprocesscoupledꢀ  
withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-  
performance and low power consumption devices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ45ns,ꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation  
– 36 mW (typical) operating  
ꢀ –ꢀ12ꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀpowerꢀsupplyꢀꢀ  
When CS1isHIGH(deselected)orwhenCS2isLOW  
(deselected), the device assumes a standby mode at  
which the power dissipation can be reduced down with  
CMOSꢀinputꢀlevels.  
ꢀ –ꢀ4.5V--5.5VꢀVdd  
Easy memory expansion is provided by using Chip Enable  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE) controls both writing and reading of the memory.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Automotiveꢀtemperatureꢀ(-40oC to +125oC)  
TheꢀIS62C10248ALꢀandꢀIS65C10248ALꢀareꢀpackagedꢀinꢀ  
theꢀJEDECꢀstandardꢀ48-pinꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm)ꢀandꢀ  
44-PinꢀTSOPꢀ(TYPEꢀII).  
•ꢀ Lead-freeꢀavailable  
FUNCTIONAL BLOCK DIAGRAM  
1M x 8  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
Copyright © 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. 00A  
09/25/09  

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