5秒后页面跳转
IS64WV102416BLL-10CTLA3 PDF预览

IS64WV102416BLL-10CTLA3

更新时间: 2024-11-20 12:46:27
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
20页 323K
描述
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS64WV102416BLL-10CTLA3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP1
包装说明:TSSOP, TSSOP48,.8,20针数:48
Reach Compliance Code:compliantECCN代码:3A991
Factory Lead Time:12 weeks风险等级:5.65
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G48JESD-609代码:e3
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
最大待机电流:0.05 A最小待机电流:1.2 V
子类别:SRAMs最大压摆率:0.14 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.4 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:12 mm

IS64WV102416BLL-10CTLA3 数据手册

 浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第2页浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第3页浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第4页浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第5页浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第6页浏览型号IS64WV102416BLL-10CTLA3的Datasheet PDF文件第7页 
IS61WV102416ALLꢀ  
IS61WV102416BLL  
IS64WV102416BLL  
1Mꢀxꢀ16ꢀꢀHIGH-SPEEDꢀASYNCHRONOUS  
CMOSꢀSTATICꢀRAMꢀWITHꢀ3.3VꢀSUPPLY  
MAYꢀ2012  
FEATURES  
•ꢀ High-speedꢀaccessꢀtimes:ꢀꢀ  
ꢀꢀ8,ꢀ10,ꢀ20ꢀns  
•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess  
•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀgreaterꢀ  
noiseꢀimmunity  
DESCRIPTION  
TheISSIIS61WV102416ALL/BLLandIS64WV102416BLLꢀ  
areꢀhigh-speed,ꢀ16M-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ1024Kꢀ  
wordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-perfor-  
manceꢀ CMOSꢀ technology.ꢀ Thisꢀ highlyꢀ reliableꢀ processꢀ  
coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ  
high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
•ꢀ EasyꢀmemoryꢀexpansionꢀwithꢀCEꢀandꢀOEꢀop-  
tions  
•ꢀ CEꢀpower-down  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.AꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs  
•ꢀ Singleꢀpowerꢀsupply  
ꢀ Vddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV102416ALL)  
ꢀ speedꢀ=ꢀ20nsꢀforꢀVddꢀ1.65Vꢀtoꢀ2.2V  
ꢀ Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV102416BLL)  
ꢀ speedꢀ=ꢀ10nsꢀforꢀVddꢀ2.4Vꢀtoꢀ3.6V  
ꢀ speedꢀ=ꢀ8nsꢀforꢀVddꢀ3.3Vꢀ+ꢀ5%  
•ꢀ Packagesꢀavailable:ꢀ  
ThedeviceispackagedintheJEDECstandard48-pinꢀ  
TSOPꢀTypeꢀIꢀandꢀ48-pinꢀMiniꢀBGAꢀ(9mmꢀxꢀ11mm).  
–ꢀꢀ48-ballꢀminiBGAꢀꢀ(9mmꢀxꢀ11mm)  
ꢀ –ꢀꢀꢀ48-pinꢀTSOPꢀ(TypeꢀI)ꢀ  
•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport  
•ꢀ Lead-freeꢀavailable  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
FUNCTIONALꢀBLOCKꢀDIAGRAM  
1024K x 16  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2006ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ  
1
Rev.ꢀ F  
05/09/12  

IS64WV102416BLL-10CTLA3 替代型号

型号 品牌 替代类型 描述 数据表
IS64WV102416BLL-10TA3 ISSI

完全替代

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS62WV102416BLL-25TLI ISSI

类似代替

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416BLL-10TLI ISSI

类似代替

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

与IS64WV102416BLL-10CTLA3相关器件

型号 品牌 获取价格 描述 数据表
IS64WV102416BLL-10CTLA3-TR ISSI

获取价格

SRAM
IS64WV102416BLL-10MA3 ISSI

获取价格

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV102416BLL-10MA3-TR ISSI

获取价格

暂无描述
IS64WV102416BLL-10MLA3 ISSI

获取价格

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV102416BLL-10MLA3-TR ISSI

获取价格

SRAM
IS64WV102416BLL-10TA3 ISSI

获取价格

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV10248BLL ISSI

获取价格

1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10CTLA3 ISSI

获取价格

1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10MA3 ISSI

获取价格

1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10TA3 ISSI

获取价格

1M x 8 HIGH-SPEED CMOS STATIC RAM