Datasheet > IS63LV1024

IS63LV1024

更新时间： 2024-09-12 22:14:27

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
8页	71K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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IS63LV1024 数据手册

IS63LV1024

128K x 8 HIGH-SPEED CMOS STATIC RAM

3.3V REVOLUTIONARY PINOUT

ISSI

SEPTEMBER 2000

FEATURES

DESCRIPTION

The ISSI IS63LV1024 is a very high-speed, low power,

131,072-word by 8-bit CMOS static RAM in revolutionary

pinout. The IS63LV1024 is fabricated using ISSI's

high-performance CMOS technology. This highly reliable

process coupled with innovative circuit design

techniques, yields higher performance and low power

consumption devices.

• High-speed access times:

8, 10, 12 and 15 ns

• High-performance, low-powerCMOSprocess

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE

options

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) with CMOS input levels.

• CE power-down

• Fully static operation: no clock or refresh

required

The IS63LV1024 operates from a single 3.3V power

supply and all inputs are TTL-compatible.

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

– 32-pin 300-mil SOJ

– 32-pin 400-mil SOJ

– 32-pin TSOP (Type II)

FUNCTIONAL BLOCK DIAGRAM

128K X 8

MEMORY ARRAY

A0-A16

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. H

10/02/00

12 3 4 5 6 7 8

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