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IS63LV1024-12TL PDF预览

IS63LV1024-12TL

更新时间: 2024-11-05 13:08:55
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 71K
描述
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IS63LV1024-12TL 数据手册

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®
IS63LV1024  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
3.3V REVOLUTIONARY PINOUT  
ISSI  
SEPTEMBER 2000  
FEATURES  
DESCRIPTION  
The ISSI IS63LV1024 is a very high-speed, low power,  
131,072-word by 8-bit CMOS static RAM in revolutionary  
pinout. The IS63LV1024 is fabricated using ISSI's  
high-performance CMOS technology. This highly reliable  
process coupled with innovative circuit design  
techniques, yields higher performance and low power  
consumption devices.  
• High-speed access times:  
8, 10, 12 and 15 ns  
• High-performance, low-powerCMOSprocess  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 250 µW (typical) with CMOS input levels.  
CE power-down  
• Fully static operation: no clock or refresh  
required  
The IS63LV1024 operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
– 32-pin 300-mil SOJ  
– 32-pin 400-mil SOJ  
– 32-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
128K X 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. H  
10/02/00  

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