Datasheet > 存储 > SRAM> IS62WV102416BLL-25TI

IS62WV102416BLL-25TI

更新时间： 2024-11-06 12:04:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	187K
描述
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

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IS62WV102416ALL

IS62WV102416BLL

IS65WV102416BLL

1M x 16 HIGH-SPEED LOW POWER

ASYNCHRONOUS CMOS STATIC RAM

JANUARY2008

FEATURES

• High-speed access times:

25, 35 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater

noise immunity

DESCRIPTION

TheISSIIS62WV102416ALL/BLLandIS65WV102416BLL

are high-speed, 16M-bit static RAMs organized as 1024K

wordsby16bits. ItisfabricatedusingISSI'shigh-perform-

anceCMOStechnology.Thishighlyreliableprocesscoupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

• Easy memory expansion with CS1 and OE

options

• CS1 power-down

• Fully static operation: no clock or refresh

required

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• TTL compatible inputs and outputs

• Single power supply

V^DD1.65V to 2.2V (IS62WV102416ALL)

speed = 35ns for V^DD1.65V to 2.2V

V^DD2.4V to 3.6V (IS62/65WV102416BLL)

speed = 25ns for V^DD2.4V to 3.6V

• Packages available:

The device is packaged in the JEDEC standard 48-pin

TSOP Type I and 48-pin Mini BGA (9mm x 11mm).

–

48-ball miniBGA (9mm x 11mm)

– 48-pin TSOP (Type I)

• Industrial and Automotive Temperature Support

• Lead-free available

• Data control for upper and lower bytes

FUNCTIONAL BLOCK DIAGRAM

1024K x 16

MEMORY ARRAY

A0-A19

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS1

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

01/18/08

12 3 4 5 6 7...17

中文翻译

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与IS62WV102416BLL-25TI相关器件

型号	品牌	获取价格	描述	数据表
IS62WV102416BLL-25TLI	ISSI	获取价格	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV102416DALL	ISSI	获取价格	Industrial and Automotive temperature support
IS62WV102416DBLL	ISSI	获取价格	Industrial and Automotive temperature support
IS62WV102416DBLL-45TLI	ISSI	获取价格	Standard SRAM, 1MX16, 45ns, CMOS, PDSO48, 12 X 20 MM, LEAD FREE, TSOP1-48
IS62WV102416EALL	ISSI	获取价格	TTL compatible interface levels
IS62WV102416EALL-55BLI	ISSI	获取价格	IC SRAM 16M PARALLEL 48MGA
IS62WV102416EALL-55BLI-TR	ISSI	获取价格	IC SRAM 16M PARALLEL 48MGA
IS62WV102416EBLL	ISSI	获取价格	TTL compatible interface levels
IS62WV102416EBLL-45BI	ISSI	获取价格	Standard SRAM, 1MX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-48
IS62WV102416EBLL-45BLI	ISSI	获取价格	Standard SRAM, 1MX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-48

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