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IS62LV1024L-45H PDF预览

IS62LV1024L-45H

更新时间: 2024-10-01 22:51:43
品牌 Logo 应用领域
矽成 - ICSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 132K
描述
128K x 8 LOW POWER AND LOW Vcc

IS62LV1024L-45H 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TSSOP, TSSOP32,.56,20Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified最大待机电流:0.00003 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.04 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

IS62LV1024L-45H 数据手册

 浏览型号IS62LV1024L-45H的Datasheet PDF文件第2页浏览型号IS62LV1024L-45H的Datasheet PDF文件第3页浏览型号IS62LV1024L-45H的Datasheet PDF文件第4页浏览型号IS62LV1024L-45H的Datasheet PDF文件第5页浏览型号IS62LV1024L-45H的Datasheet PDF文件第6页浏览型号IS62LV1024L-45H的Datasheet PDF文件第7页 
IS62LV1024L  
IS62LV1024LL  
128K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ꢀEATURES  
DESCRIPTION  
The ICSI IS62LV1024L and IS62LV1024LL are low power  
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They  
are fabricated using ICSI's high-performance CMOS technol-  
ogy. This highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low power  
consumption devices.  
• Access times of 45, 55, and 70 ns  
• Low active power: 60 mW (typical)  
• Low standby power: 15 µW (typical) CMOS  
standby  
• Low data retention voltage: 2V (min.)  
• Available in Low Power (-L) and  
Ultra Low Power (-LL)  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
Easy memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 2.7V to 3.6V power supply  
The IS62LV1024L and IS62LV1024LL are available in 32-pin  
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin  
6*8mm Tꢀ-BGA.  
ꢀUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
1

与IS62LV1024L-45H相关器件

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IS62LV1024L-45HI ICSI

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128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45HI ISSI

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Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
IS62LV1024L-45Q ICSI

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128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45Q ISSI

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Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOP-32
IS62LV1024L-45QI ICSI

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128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45T ICSI

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128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45T ISSI

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Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSOP1-32
IS62LV1024L-45TI ICSI

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128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45TS ISSI

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Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32
IS62LV1024L-45TSI ISSI

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Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32