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IS61WV6416DBLL-8BI PDF预览

IS61WV6416DBLL-8BI

更新时间: 2024-09-18 20:10:03
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
21页 737K
描述
Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48

IS61WV6416DBLL-8BI 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DSBGA包装说明:TFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.48Is Samacsys:N
最长访问时间:8 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48长度:8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:2.5/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000055 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.07 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.4 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:6 mmBase Number Matches:1

IS61WV6416DBLL-8BI 数据手册

 浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第2页浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第3页浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第4页浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第5页浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第6页浏览型号IS61WV6416DBLL-8BI的Datasheet PDF文件第7页 
performanceCMOStechnology.Thishighlyreliableprocessꢀ  
                                                                             
IS61WV6416DALL/DALS  
IS61WV6416DBLL/DBLS  
IS64WV6416DBLL/DBLS  
64K x 16 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM  
JANUARY 2011  
DESCRIPTION  
FEATURES  
TheISSIIS61WV6416DAxx/DBxxandIS64WV6416DBxxꢀ  
areꢀhigh-speed,ꢀ1,048,576-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ  
65,536ꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-  
HIGHꢀSPEED:ꢀ(IS61/64WV6416DALL/DBLL)  
•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ12,ꢀ20ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ135ꢀmWꢀ(typical)  
•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)  
coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ  
high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
CMOSꢀstandby  
LOWꢀPOWER:ꢀ(IS61/64WV6416DALS/DBLS)  
•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ55ꢀmWꢀ(typical)  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)  
CMOSꢀstandby  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ Singleꢀpowerꢀsupply  
ꢀ —ꢀꢀVddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV6416DAxx)  
ꢀ —ꢀꢀVddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV6416DBxx)  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailable  
Theꢀ IS61WV6416DAxx/DBxxꢀ andꢀ IS64WV6416DBxxꢀ  
areꢀꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ44-pinꢀTSOPꢀTypeꢀ  
II,ꢀ 44-pinꢀ 400-milꢀ SOJꢀ ꢀ andꢀ 48-pinꢀ Miniꢀ BGAꢀ (6mmꢀ xꢀ  
8mm).  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2010ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
1
Rev. A  
11/18/2010  

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