Datasheet > IS61WV6416DBLL-10BI

IS61WV6416DBLL-10BI

更新时间： 2024-09-19 10:43:39

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
21页	737K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48

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中文翻译

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IS61WV6416DBLL-10BI 数据手册

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performanceꢀCMOSꢀtechnology.Thisꢀhighlyꢀreliableꢀprocessꢀ

IS61WV6416DALL/DALS

IS61WV6416DBLL/DBLS

IS64WV6416DBLL/DBLS

64K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM

JANUARY 2011

DESCRIPTION

FEATURES

TheꢀISSIꢀIS61WV6416DAxx/DBxxꢀandꢀIS64WV6416DBxxꢀ

areꢀhigh-speed,ꢀ1,048,576-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ

65,536ꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-

HIGHꢀSPEED:ꢀ(IS61/64WV6416DALL/DBLL)

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ12,ꢀ20ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ135ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)

coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ

high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

CMOSꢀstandby

LOWꢀPOWER:ꢀ(IS61/64WV6416DALS/DBLS)

•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ55ꢀmWꢀ(typical)

WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ

standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-

ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)

CMOSꢀstandby

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ

memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ

Byteꢀ(LB)ꢀaccess.

•ꢀ Singleꢀpowerꢀsupply

ꢀ —ꢀꢀV^ddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV6416DAxx)

ꢀ —ꢀꢀV^ddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV6416DBxx)

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ

required

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

Theꢀ IS61WV6416DAxx/DBxxꢀ andꢀ IS64WV6416DBxxꢀ

areꢀꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ44-pinꢀTSOPꢀTypeꢀ

II,ꢀ 44-pinꢀ 400-milꢀ SOJꢀ ꢀ andꢀ 48-pinꢀ Miniꢀ BGAꢀ (6mmꢀ xꢀ

8mm).

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀ

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances

ꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev. A

11/18/2010

12 3 4 5 6 7...21

中文翻译

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与IS61WV6416DBLL-10BI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV6416DBLL-10TI	ISSI	获取价格	64KX16 STANDARD SRAM, 10ns, PDSO44, TSOP2-44
IS61WV6416DBLL-8BI	ISSI	获取价格	Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48
IS61WV6416EEBLL	ISSI	获取价格	64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV6416LL-20T	ISSI	获取价格	Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS61WV6416LL-20TI	ISSI	获取价格	Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS61ZB12836-117TQ	ISSI	获取价格	ZBT SRAM, 128KX36, 4.5ns, CMOS, PQFP100, TQFP-100
IS61ZB12836-133TQ	ISSI	获取价格	ZBT SRAM, 128KX36, 4.2ns, CMOS, PQFP100, TQFP-100
IS61ZB12836-5TQ	ISSI	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PQFP100, TQFP-100
IS61ZB12836-6TQ	ISSI	获取价格	ZBT SRAM, 128KX36, 6ns, CMOS, PQFP100, TQFP-100
IS61ZB6432-5PQ	ISSI	获取价格	ZBT SRAM, 64KX32, 5ns, CMOS, PQFP100, PLASTIC, QFP-100

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