Datasheet > IS61WV25616EDBLL-8BLI-TR

IS61WV25616EDBLL-8BLI-TR

更新时间： 2024-11-13 10:37:51

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
14页	681K
描述
Application Specific SRAM, 256KX16, 8ns, CMOS, PBGA48

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IS61WV25616EDBLL

IS64WV25616EDBLL

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

OCTOBER 2011

DESCRIPTION

FEATURES

Theꢀ ISSIꢀ IS61/64WV25616EDBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ

4,194,304-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ262,144ꢀwordsꢀ

byꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ

CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ

withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-

performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)ꢀ

CMOSꢀstandby

•ꢀ Singleꢀpowerꢀsupply

ꢀ —ꢀꢀV^ddꢀ2.4Vꢀtoꢀ3.6Vꢀ(10ꢀns)

—ꢀꢀV^dd3.3Vꢀ ꢀ10%ꢀ(8ꢀns)

WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ

standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-

ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ

required

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ

memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ

Byteꢀ(LB)ꢀaccess.

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection

TheꢀIS61/64WV25616EDBLLꢀisꢀꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ44-pinꢀTSOP-IIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ

8mm).

FUNCTIONAL BLOCK DIAGRAM

Memory

Lower IO

Array-

Memory

Upper IO

Array-

A0-A17

ECC

Array-

256K

ECC

Array-

256K

Decoder

256Kx8

IO0-7

ECC

I/O Data

Circuit

Column I/O

IO8-15

/CE

/OE

/WE

/UB

/LB

Control

Circuit

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev. A

09/29/2011

12 3 4 5 6 7...14

中文翻译

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IS61WV25616EDBLL-8BLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS61WV25616EDBLL-8BLI	ISSI	完全替代	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

与IS61WV25616EDBLL-8BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS61WV25616EDBLL-8TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8TLI-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 8ns, CMOS, PDSO44
IS61WV25632ALL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632ALS	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632BLL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632BLL-10BLI	ISSI	获取价格	Standard SRAM, 256KX32, 10ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA
IS61WV25632BLS	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV2568EDBLL	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10BI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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