Datasheet > 暂无类别数据> IS61WV25616EDBLL-10TI

IS61WV25616EDBLL-10TI

更新时间： 2024-09-23 12:08:39

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	751K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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IS61WV25616EDBLL

IS64WV25616EDBLL

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

OCTOBER 2011

DESCRIPTION

FEATURES

Theꢀ ISSIꢀ IS61/64WV25616EDBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ

4,194,304-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ262,144ꢀwordsꢀ

byꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ

CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ

withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-

performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)ꢀ

CMOSꢀstandby

•ꢀ Singleꢀpowerꢀsupply

ꢀ —ꢀꢀV^ddꢀ2.4Vꢀtoꢀ3.6Vꢀ(10ꢀns)

—ꢀꢀV^dd3.3Vꢀ ꢀ10%ꢀ(8ꢀns)

WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ

standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-

ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ

required

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ

memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ

Byteꢀ(LB)ꢀaccess.

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection

TheꢀIS61/64WV25616EDBLLꢀisꢀꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ44-pinꢀTSOP-IIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ

8mm).

FUNCTIONAL BLOCK DIAGRAM

Memory

Lower IO

Array-

Memory

Upper IO

Array-

A0-A17

ECC

Array-

256K

ECC

Array-

256K

Decoder

256Kx8

IO0-7

ECC

I/O Data

Circuit

Column I/O

IO8-15

/CE

/OE

/WE

/UB

/LB

Control

Circuit

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev. A

09/29/2011

12 3 4 5 6 7...14

中文翻译

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与IS61WV25616EDBLL-10TI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV25616EDBLL-10TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-10TLI-TR	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BLI-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 8ns, CMOS, PBGA48
IS61WV25616EDBLL-8TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8TLI-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 8ns, CMOS, PDSO44
IS61WV25632ALL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632ALS	ISSI	获取价格	TTL compatible inputs and outputs

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