Datasheet > 存储 > SRAM> IS61WV25616BLS-25TLI

IS61WV25616BLS-25TLI

更新时间： 2024-11-12 12:08:39

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
21页	212K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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技术参数
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IS61WV25616BLS-25TLI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSOP2
包装说明：	TSOP2, TSOP44,.46,32	针数：	44
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	Factory Lead Time：	8 weeks
风险等级：	5.63	Is Samacsys：	N
最长访问时间：	25 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G44	JESD-609代码：	e3
长度：	18.415 mm	内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
端子数量：	44	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP2
封装等效代码：	TSOP44,.46,32	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	2.5/3.3 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.009 A	最小待机电流：	2 V
子类别：	SRAMs	最大压摆率：	0.025 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.4 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	10	宽度：	10.16 mm
Base Number Matches：	1

IS61WV25616BLS-25TLI 数据手册

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IS61WV25616ALL/ALS

IS61WV25616BLL/BLS

IS64WV25616BLL/BLS

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

JULY2010

DESCRIPTION

FEATURES

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as

262,144 words by 16 bits. It is fabricated usingISSI's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

HIGHSPEED:(IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standby

LOWPOWER:(IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Low Standby Power: 0.6 mW (typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Singlepowersupply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are

packagedintheJEDECstandard44-pinTSOPTypeII and

48-pin Mini BGA (6mm x 8mm).

• Data control for upper and lower bytes

• IndustrialandAutomotivetemperaturesupport

• Lead-freeavailable

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. G

07/15/2010

12 3 4 5 6 7...21

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与IS61WV25616BLS-25TLI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV25616BLS-25TLI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 25ns, CMOS, PDSO44
IS61WV25616EDBLL-10BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-10BLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-10BLI-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 10ns, CMOS, PBGA48
IS61WV25616EDBLL-10TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-10TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-10TLI-TR	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616EDBLL-8BLI-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 8ns, CMOS, PBGA48

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