Datasheet > IS61WV25616BLL-10BI-TR

IS61WV25616BLL-10BI-TR

更新时间： 2024-09-23 21:09:07

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
22页	421K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PBGA48

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IS61WV25616BLL-10BI-TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FBGA, BGA48,6X8,30	Reach Compliance Code：	compliant
Factory Lead Time：	8 weeks	风险等级：	5.91
最长访问时间：	10 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
端子数量：	48	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA48,6X8,30	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	并行/串行：	PARALLEL
电源：	2.5/3.3 V	认证状态：	Not Qualified
最大待机电流：	0.009 A	最小待机电流：	2 V
子类别：	SRAMs	最大压摆率：	0.045 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
Base Number Matches：	1

IS61WV25616BLL-10BI-TR 数据手册

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performanceꢀCMOSꢀtechnology.Thisꢀhighlyꢀreliableꢀprocessꢀ

IS61WV25616ALL/ALS

IS61WV25616BLL/BLS

IS64WV25616BLL/BLS

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEBRUARY 2017

DESCRIPTION

FEATURES

TheꢀISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

areꢀhigh-speed,ꢀ4,194,304-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ

262,144 words by 16 bits.It is fabricated using ISSI's high-

HIGH SPEED: (IS61/64WV25616ALL/BLL)

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ20ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35,ꢀ45ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ35ꢀmWꢀ(typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be re-

duced down with CMOS input levels.

•ꢀ LowꢀStandbyꢀPower:ꢀ0.6ꢀmWꢀ(typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE.ꢀTheꢀactiveꢀLOWꢀ

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

•ꢀ Singleꢀpowerꢀsupply

— Vdd 1.65V to 2.2V (IS61WV25616Axx)

— Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV25616Bxx)

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀrequired

•ꢀ Threeꢀstateꢀoutputs

Theꢀ IS61WV25616Axx/Bxxꢀ andꢀ IS64WV25616Bxxꢀ areꢀ

packaged in the JEDEC standard 44-pin 400mil SOJ,

44-pinꢀTSOPꢀTypeꢀIIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ8mm).

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. H1

02/10/2017

12 3 4 5 6 7...22

中文翻译

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与IS61WV25616BLL-10BI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS61WV25616BLL-10BLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL-10BLI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48
IS61WV25616BLL-10TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL-10TL	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL-10TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL-10TLI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV25616BLL-10TL-TR	ISSI	获取价格	暂无描述
IS61WV25616BLS-25TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS-25TLI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 25ns, CMOS, PDSO44
IS61WV25616EDBLL-10BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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