Datasheet > 存储 > SRAM> IS61SP6464-8TQI

IS61SP6464-8TQI

更新时间： 2024-11-19 04:44:47

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
20页	119K
描述
64K x 64 SYNCHRONOUS PIPELINE STATIC RAM

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技术参数
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IS61SP6464-8TQI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	14 X 20 MM, TQFP-128	针数：	128
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.89
Is Samacsys：	N	最长访问时间：	8 ns
其他特性：	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	最大时钟频率 (fCLK)：	66 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PQFP-G128
JESD-609代码：	e0	长度：	20 mm
内存密度：	4194304 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	64	湿度敏感等级：	3
功能数量：	1	端子数量：	128
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64KX64
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFQFP	封装等效代码：	QFP128,.63X.87,20
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	3.3 V	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大待机电流：	0.01 A
最小待机电流：	3.14 V	子类别：	SRAMs
最大压摆率：	0.17 mA	最大供电电压 (Vsup)：	3.63 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

IS61SP6464-8TQI 数据手册

IS61SP6464

64K x 64 SYNCHRONOUS

PIPELINE STATIC RAM

ISSI

APRIL 2001

FEATURES

DESCRIPTION

The ISSI IS61SP6464 is a high-speed, low-power synchro-

nous static RAM designed to provide a burstable, high-

performance, secondary cache for the i486™, Pentium™,

680X0™, and PowerPC™ microprocessors. It is organized

as 65,536 words by 64 bits, fabricated with ISSI's advanced

CMOStechnology.Thedeviceintegratesa2-bitburstcounter,

high-speed SRAM core, and high-drive capability outputs into

asinglemonolithiccircuit.Allsynchronousinputspassthrough

registers controlled by a positive-edge-triggered single clock

input.

• Fast access time:

– 133, 117, 100 MHz; 6 ns (83 MHz);

7 ns (75 MHz); 8 ns (66 MHz)

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control

using MODE input

Write cycles are internally self-timed and are initiated by the

rising edge of the clock input. Write cycles can be from one to

eight bytes wide as controlled by the write control inputs.

• Five chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• Power-down control by ZZ input

• JEDEC 128-Pin TQFP 14mm x 20mm

package

Separate byte enables allow individual bytes to be written.

BW1 controls I/O1-I/O8, BW2 controls I/O9-I/O16, BW3 con-

trols I/O17-I/O24, BW4 controls I/O25-I/O32, BW5 controls

I/O33-I/O40, BW6 controls I/O41-I/O48, BW7 controls I/O49-

I/O56, BW8 controls I/O57-I/O64, conditioned by BWE being

LOW. A LOW onGW input would cause all bytes to be written.

• Single +3.3V power supply

• Control pins mode upon power-up:

– MODE in interleave burst mode

– ZZ in normal operation mode

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller) input

pins. Subsequent burst addresses can be generated inter-

nally by the IS61SP6464 and controlled by the ADV (burst

address advance) input pin.

These control pins can be connected to GNDQ

or VCCQ to alter their power-up state

Asynchronoussignalsincludeoutputenable(OE),sleepmode

input(ZZ), andburstmodeinput(MODE). AHIGHinputonthe

ZZ pin puts the SRAM in the power-down state. When ZZ is

pulled LOW (or no connect), the SRAM normally operates

after the wake-up period. A LOW input, i.e., GND^Q, on MODE

pin selects LINEAR Burst. A VCCQ (or no connect) on MODE

pin selects INTERLEAVED Burst.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

12 3 4 5 6 7...20

中文翻译

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与IS61SP6464-8TQI相关器件

型号	品牌	获取价格	描述	数据表
IS61SPD25632D-150TQ	ISSI	获取价格	Cache SRAM, 256KX32, 3.8ns, CMOS, PQFP100, TQFP-100
IS61SPD25632D-150TQI	ISSI	获取价格	Cache SRAM, 256KX32, 3.8ns, CMOS, PQFP100, TQFP-100
IS61SPD25632D-5TQ	ISSI	获取价格	Cache SRAM, 256KX32, 5ns, CMOS, PQFP100, TQFP-100
IS61SPD25632T	ISSI	获取价格	256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM
IS61SPD25632T/D	ISSI	获取价格	256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM
IS61SPD25632T-150TQ	ISSI	获取价格	Cache SRAM, 256KX32, 3.8ns, CMOS, PQFP100, TQFP-100
IS61SPD25632T-150TQI	ISSI	获取价格	Cache SRAM, 256KX32, 3.8ns, CMOS, PQFP100, TQFP-100
IS61SPD25632T-5TQI	ISSI	获取价格	Cache SRAM, 256KX32, 5ns, CMOS, PQFP100, TQFP-100
IS61SPD25636D-133TQI	ISSI	获取价格	Cache SRAM, 256KX36, 4ns, CMOS, PQFP100, TQFP-100
IS61SPD25636D-5B	ISSI	获取价格	Cache SRAM, 256KX36, 5ns, CMOS, PBGA119, PLASTIC, BGA-119

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