是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | BGA | 包装说明: | TBGA, BGA165,11X15,40 |
针数: | 165 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
Factory Lead Time: | 12 weeks | 风险等级: | 5.75 |
最长访问时间: | 3.5 ns | 最大时钟频率 (fCLK): | 166 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B165 |
长度: | 15 mm | 内存密度: | 37748736 bit |
内存集成电路类型: | ZBT SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 165 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX36 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装等效代码: | BGA165,11X15,40 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE |
并行/串行: | PARALLEL | 电源: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大待机电流: | 0.12 A | 最小待机电流: | 1.71 V |
子类别: | SRAMs | 最大压摆率: | 0.34 mA |
最大供电电压 (Vsup): | 1.89 V | 最小供电电压 (Vsup): | 1.71 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 13 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61NVVP204836B | ISSI |
获取价格 |
100 percent bus utilization | |
IS61NVVP204836B-166TQLI | ISSI |
获取价格 |
ZBT SRAM, 2MX36, 3.5ns, CMOS, PQFP100, TQFP-100 | |
IS61NVVP25672 | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP25672-200B | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP25672-200BI | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP25672-250B | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP25672-250BI | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP409618B | ISSI |
获取价格 |
100 percent bus utilization | |
IS61NVVP51236 | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVP51236-200B | ISSI |
获取价格 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM |