是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LQFP, | Reach Compliance Code: | compliant |
Factory Lead Time: | 10 weeks | 风险等级: | 5.74 |
最长访问时间: | 3 ns | JESD-30 代码: | R-PQFP-G100 |
长度: | 20 mm | 内存密度: | 18874368 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 100 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512KX36 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LQFP |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK, LOW PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
座面最大高度: | 1.6 mm | 最大供电电压 (Vsup): | 2.625 V |
最小供电电压 (Vsup): | 2.375 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61NVP51236B-200TQLI-TR | ISSI |
获取价格 |
IC SRAM 18M PARALLEL 100LQFP | |
IS61NVP51272-200B1 | ISSI |
获取价格 |
ZBT SRAM, 512KX72, 3.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | |
IS61NVP51272-200B1I | ISSI |
获取价格 |
ZBT SRAM, 512KX72, 3.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | |
IS61NVP51272-250B1I | ISSI |
获取价格 |
ZBT SRAM, 512KX72, 2.6ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | |
IS61NVP6436A | ISSI |
获取价格 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVP6436A-200TQ | ISSI |
获取价格 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVP6436A-200TQI | ISSI |
获取价格 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVP6436A-250TQ | ISSI |
获取价格 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVP6436A-250TQI | ISSI |
获取价格 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM | |
IS61NVVF204836B | ISSI |
获取价格 |
100 percent bus utilization |